Features n 600 V, 30 A, Low Collector-Emitter Satu.
Bourns
BIDNW30N60H3 - Insulated Gate Bipolar Transistor
Features n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching .
