Features n 650 V, 50 A, Low Collector-Emitter Satu.
Bourns
BIDW50N65T - Insulated Gate Bipolar Transistor
Features n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS comp.
