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2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G

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TO-92 Plastic-Encapsulate Transistors 2SC2328 TRANSISTOR (NPN) FEATURES z Complement to 2SA928A z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unl

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2SA1024 PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two groups, O and Y according to it

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MMBT3903 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3905 are rec

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2SA1206 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. On special request, these transis

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SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES  Complementary to MMST5401  Small Surface Mount Package  Ideal for Medium Power A

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BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor 1.Base 2.Emitter 3.Collector TO-92 Plastic Package Weight

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2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G

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ST 2SA708 PNP Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided i

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MMBD6100 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitanc

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2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, acc

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MMBTSC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G

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2SC1393 NPN Silicon Epitaxial Planar Transistor TV VHF TUNER RF AMPLIFIER (FORWARD AGC) The transistor is subdivided into three group, R、 O and Y, acc

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2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, ac

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2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G

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SD101A (1N6263) SD101C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD101 Series is a metal on silicon Schottky barrier dev

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TRANSISTOR (NPN) FEATURES Complimentary to M8550 Collector Current: IC=0.8A MARKING: Y11 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Pa

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BAS19W, BAS20W, BAS21W Silicon Epitaxial Planar Diodes High Voltage Switching Diodes BAS19W BAS20W BAS321W BAS231AW BAS231CW BAS321SW 12 1 Abs

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BAS19W, BAS20W, BAS21W Silicon Epitaxial Planar Diodes High Voltage Switching Diodes BAS19W BAS20W BAS321W BAS231AW BAS231CW BAS321SW 12 1 Abs

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2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G an

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