BM30-12 Datasheet | Specifications & PDF Download

IGBT MODU ODULE MBM300GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-1E FLASH MEMORY CMOS 128 M (16 M × 8) BIT NAND-type MBM30LV0128 s DESCRIPTION The MBM30LV0128 device i

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BM30-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM30-12 is Designed for VHF land mobil applications in the 150175 MHZ range. PACKAGE ST

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