BN10 Datasheet | Specifications & PDF Download

RBN100N180S2HFWA 1800V - 200A/100A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h

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BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weigh

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DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF RoHS compliant & Halogen Free Produ

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CRYSTAL CLEAR TECHNOLOGY SDN. BHD. www.DataSheet4U.com Spec. No: G2432W31NBN10 Rev. 1.0 LCD MODULE (DEPARTMENT) SPECIFICATION G2432W31NBN10 – REV

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • LOW ESR • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltag

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EiceDRIVER™ Boost Booster for Automotive Applications 1EBN1001AE Single Channel Booster for Inverter Systems Final Datasheet Hardware Description Rev.

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DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF RoHS compliant & Halogen Free Produ

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • LOW ESR • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltag

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