BR31 Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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Compact Technology SCHOTTKY BARRIER RECTIFIERS MBR360 thru MBR3200 REVERSE VOLTAGE - 60 to 200 Volts FORWARD CURRENT - 3.0 Amperes FEATURES Metal-Se

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MBR370-MBR3100 High-reliability discrete products and engineering services since 1977 3 AMP SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high

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CY8CMBR3002/CY8CMBR3102/ CY8CMBR3106S/CY8CMBR3108/ CY8CMBR3110/CY8CMBR3116 Datasheet CapSense Express Controllers with SmartSense Auto-tuning - 16 But

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UNISONIC TECHNOLOGIES CO., LTD MBR3100 Preliminary 3.0A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectif

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CY8CMBR3002/CY8CMBR3102/ CY8CMBR3106S/CY8CMBR3108/ CY8CMBR3110/CY8CMBR3116 Datasheet CapSense Express Controllers with SmartSense Auto-tuning - 16 But

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UNISONIC TECHNOLOGIES CO., LTD MBR3150 Preliminary 3.0A SCHOTTKY BARRIER RECTIFIER DIODE  DESCRIPTION The UTC MBR3150 is a 3.0A schottky barrier

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R SCHOTTKY BARRIER DIODE HBR3100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 100 V 175 ℃ 0.7V （@Tj=125℃） DO-201AD(DO-27) APPL

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MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 3.0 Amperes FEATURES • Guard Ring Die Construction for Transient Protecti

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CY8CMBR3002/CY8CMBR3102/ CY8CMBR3106S/CY8CMBR3108/ CY8CMBR3110/CY8CMBR3116 Datasheet CapSense Express Controllers with SmartSense Auto-tuning - 16 But

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BR305 THRU BR310 SINGLE-PHASE SILICON BRIDGE Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes Features Surge overload rating - 50 amp

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Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geomet

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MBR320-MBR3100 AXIAL LEADED SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 - 100V CURRENT: 3.0 A Features Schottky Barrier Chip Guard Ring Die

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS KBPC BR 1005 305 THRU KBPC BR 110 310 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTI

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DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power

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MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM (V) 100 IO (A) 3 VF (MAX) (V) @ +25°C 0.85 IR (MAX) (mA) @ +25°C 0.5 Descript

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Compact Technology SCHOTTKY BARRIER RECTIFIERS MBR360 thru MBR3200 REVERSE VOLTAGE - 60 to 200 Volts FORWARD CURRENT - 3.0 Amperes FEATURES Metal-Se

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MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-t

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BR3005 thru BR310 SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT BR3 .268(6.8) .228(5.8) 50 to 1000Volts 3.0 Amperes FEATURES ● Surge ove

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