Production specification P-Channel Enhancement Mo.
LBSS84WT1G - Power MOSFET
LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making t.BSS84W - P-CHANNEL 130mA POWER MOSFET
P-CHANNEL 130mA POWER MOSFET BSS84W FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHA.BSS84W - SMD P-Channel MOSFET
SMD P-Channel MOSFET BSS84W Formosa MS List List 1 .BSS84W - P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS -50V RDS(ON) 10Ω @ VGS = -5V ID TA = +25°C -130mA Description and.LBSS84WT3G - Power MOSFET
LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making t.BSS84W - P-Channel Power Mosfet
Production specification P-Channel Enhancement Mode Field Effect Transistor BSS84W FEATURES Low On-Resistance。 Low Gate Threshold Voltage. Low.BSS84W-G - P-Channel MOSFET
MOSFET BSS84W-G P-Channel RoHS Device Features - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Fast Switching Speed. C.