BSS84W-G Datasheet | Specifications & PDF Download

Production specification P-Channel Enhancement Mode Field Effect Transistor BSS84W FEATURES  Low On-Resistance。  Low Gate Threshold Voltage.  Low

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P-CHANNEL 130mA POWER MOSFET BSS84W FEATURES  ADVANCED TRENCH PROCESS TECHNOLOGY  HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE  FULLY CHA

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MOSFET BSS84W-G P-Channel RoHS Device Features - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Fast Switching Speed. C

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LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making t

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SMD P-Channel MOSFET BSS84W Formosa MS List List 1

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BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS -50V RDS(ON) 10Ω @ VGS = -5V ID TA = +25°C -130mA Description and

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LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making t

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BSS84WQ 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS -50V RDS(ON) 10Ω @ VGS = -5V ID TA = +25°C -164mA Descriptio

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