BT4.0 Datasheet | Specifications & PDF Download

Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280

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TDA7379 4 X 13 - 2 X 38W AUDIO POWER AMPLIFIER 2 X 13 + 1 X 38W AUDIO POWER AMPLIFIER PRODUCT PREVIEW ■ HIGH OUTPUT POWER CAPABILITY 2 x 38W/4Ω @18

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NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry i

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PMBT4403YS 40V, 600 mA double PNP switching transistor 2 July 2015 Product data sheet 1. General description Double PNP switching transistor in a

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10/100 Base-T Duad Port Transformer Module Designed to meet IEEE802.3ab requirement Designed to meet IR 255℃ peak requirement Primary inductance 350uH

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www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4123

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SPECIFICATION SPEC. NO.： REV： 1.2 DATE： 12. 26.2012 PRODUCT NAME： AP6210 APPROVED CHECKED PREPARED DCC ISSUE NAME AMPAK Technology Inc. www.

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2N4400 / MMBT4400 Discrete POWER & Signal Technologies 2N4400 MMBT4400 C E C BE TO-92 SOT-23 Mark: 83 B NPN General Purpose Amplifier This devi

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PMBT4401YS 40 V, 600 mA, double NPN switching transistor 2 July 2015 Product data sheet 1. General description Double NPN switching transistor in

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBT4403 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Descri

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MMBT491 NPN Transistor Features ■ Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Absolute Maximum Ratings (TA=25°C unless otherwise n

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT4401 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 15 2004 J

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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www.vishay.com VBT4045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A

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MMBT4401K PNP Epitaxial Silicon Transistor MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor February 2005 3 Marking 2 SOT-23 1 1.

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MMBT4126 — PNP General-Purpose Amplifier MMBT4126 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and

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Document 425-1 Wideband Transformers Dimensions – surface mount parts Dot indicates pin #1 WBxxxx XXXX Y Part number Internal code • Surface mo

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