BTC4505N3 Datasheet | Specifications & PDF Download

High Voltage Transistor (NPN) BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2018.04.1

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