Philips Semiconductors Product Specification Pow.
NXP
BUK456-200B - PowerMOS transistor
Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.
Inchange Semiconductor
BUK456-200B - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.