BUK456-200B Datasheet | Specifications & PDF Download

Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations

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