BUK9518-55A Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor BUK9518-55A ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Fully characterized avalanche voltage and c

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TO -22 0A B BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description

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