BUZ12 Datasheet | Specifications & PDF Download

isc N-Channel Mosfet Transistor BUZ12 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·SOA is Power Dissipation Limited ·High i

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BUZ 12 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 VDS 50

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BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 A VD

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isc N-Channel Mosfet Transistor BUZ12A ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·SOA is Power Dissipation Limited ·High

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BUZ 12 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 12 AL Pin 2

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