BYV32 Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

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Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated high efficiency dual rectifier diodes i

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BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 27 February 2009 Product data sheet 1. Product profile 1.1 General descri

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

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Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated high efficiency dual rectifier diodes i

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Ultrafast Rectifier INCHANGE Semiconductor BYV32-200 FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junctio

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BYV32EB-300P Dual ultrafast power diode Rev.03 - 21 February 2024 Product data sheet 1. General description Dual ultrafast power diode in a TO263 (D

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Ultra fast Rectifier INCHANGE Semiconductor BYV32E FEATURES ·High surge capacity ·Low forward voltage ·Fast switching ·Soft recovery characteristic

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BYV32-50 THRU BYV32-200 FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 150 Volts TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154

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Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated high efficiency dual rectifier diodes i

(26 views)

BYV32-50 THRU BYV32-200 FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 150 Volts TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154

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LAB MECHANICAL DATA Dimensions in mm 10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 16.38 16.89 13.39 13.64 SEME BYV32–50–XM / XTM4 BYV3

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BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General descriptio

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Fast Rectifier FEATURES ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, hi

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LAB MECHANICAL DATA Dimensions in mm 10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 16.38 16.89 13.39 13.64 SEME BYV32–50–XM / XTM4 BYV3

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TO-220AB BYV32E-200P Dual ultrafast power diode 14 May 2015 Product data sheet 1. General description Dual ultrafast power diode in a SOT78 (TO-220

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Switch‐mode Power Rectifier BYV32-200 Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Opera

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BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0.6 0.

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LAB MECHANICAL DATA Dimensions in mm 10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 16.38 16.89 13.39 13.64 SEME BYV32–50–XM / XTM4 BYV3

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

(24 views)