C106D Datasheet | Specifications & PDF Download

TM C106D C106M HPM SCRs HAOPIN MICROELECTRONICS CO.,LTD. Description Standard gate triggering SCR is fully isolated package suitable for the appl

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C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassivated PNPN devices designed for high volume consum

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Thyristors TIC106D APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Max IGT of 200μA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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Shantou Huashan Electronic Devices Co.,Ltd. HC106D Sensitive Gate Silicon Controlled Rectifier General Description Glassivated PNPN devices designed

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2A SCRs : 2A 【】 RoHS SGS, RoHS ■ Product Model Reference & Naming【】 2A (Amperes) TO-126 or TO-225AA TO-126 TO-126F TO-126 TO-252 or SOT428 TO-2

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C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high vol

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2A SCRs : 2A 【】 RoHS SGS, RoHS ■ Product Model Reference & Naming【】 2A (Amperes) TO-126 or TO-225AA TO-126 TO-126F TO-126 TO-252 or SOT428 TO-2

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C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high vol

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2A SCRs : 2A 【】 RoHS SGS, RoHS ■ Product Model Reference & Naming【】 2A (Amperes) TO-126 or TO-225AA TO-126 TO-126F TO-126 TO-252 or SOT428 TO-2

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyris

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C106A1 C106D1 C106B1 C106E1 C106C1 C106M1 SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: Th

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SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • •

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TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltag

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C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassivated PNPN devices designed for high volume consum

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HSC106D/M HSC106D/M Silicon Controlled Rectifier FEATURES  Repetitive Peak Off-State Voltage (VDRM=400V/600V)  R.M.S On-State Current (IT(RMS)=4.0A

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® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC106 Series(5A SCRS) TIC106 series 5A Continuous On-State Current 400V t

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isc Thyristors C106D FEATURES ·Glassivated surface for reliability and uniformity ·Practical level triggering and holding characteristics ·100% aval

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Product Search Data Sheet NFM18PC106D0J3# Note: This datasheet may be out of date. Please download the latest datasheet of NFM18PC106D0J3# from the o

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