C1972 Datasheet | Specifications & PDF Download

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HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC1972 Note : Above parameters , ratings , limits and cond

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INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On State Voltage Drop Operating Voltage Ratings 800 250 3 550 Units VP mArms V

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2SC1972 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEAT

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2SC1972 Description The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal

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INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On State Voltage Drop Operating Voltage Ratings 800 250 3 550 Units VP mArms V

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INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On State Voltage Drop Operating Voltage Ratings 800 250 3 550 Units VP mArms V

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CPC1972 AC Power Switch Parameter Blocking Voltage Load Current On State Voltage Drop Operating Voltage Ratings 800 250 3 550 Units VP mArms Vrms (

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INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On State Voltage Drop Operating Voltage Ratings 800 250 3 550 Units VP mArms V

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UCC1972/3 UCC2972/3 UCC3972/3 BiCMOS Cold Cathode Fluorescent Lamp Driver Controller FEATURES • 1mA Typical Supply Current • Accurate Lamp Current C

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