2SC1972 Datasheet, transistor equivalent, Eleflow

2SC1972 Features

  • Transistor
  • High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz
  • Emitter ballasted construction for reliability and performance.
  • Manufactured incorporating

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Part number:

2SC1972

Manufacturer:

Eleflow

File Size:

711.05kb

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📄 Datasheet

Description:

Silicon npn epitaxial planar type transistor. The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for

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Page 2 of 2SC1972

2SC1972 Application

  • Applications Features
  • High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz
  • Emitter ballasted construction for relia

TAGS

2SC1972
silicon
NPN
epitaxial
planar
type
transistor
Eleflow

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