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2SC1975 - NPN Transistor

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Part number 2SC1975
Manufacturer INCHANGE
File Size 180.31 KB
Description NPN Transistor
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Description

Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) Withstands worst overload conditions. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V ICM Collector Current PC T

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