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2SC1975 - NPN Transistor

2SC1975 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1975 .
Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min). Withstands worst overload conditions. 100% avalanche tested. Minimum Lot-to-L.

2SC1975 Applications

* Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V ICM Collector Current PC Total Power Dissipation @ TC=25℃

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Datasheet Details

Part number
2SC1975
Manufacturer
INCHANGE
File Size
180.31 KB
Datasheet
2SC1975-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC1975-like datasheet