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2SC1913 NPN Transistor

2SC1913 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1913 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150(V)(Min. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device perf.

2SC1913 Applications

* Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃

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Datasheet Details

Part number
2SC1913
Manufacturer
INCHANGE
File Size
187.01 KB
Datasheet
2SC1913-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC1913-like datasheet