2SC1953 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). Good Linearity of hFE. Complement to Type 2SA914. Minimum Lot-to-Lot.

📥 Download Datasheet

2SC1953 Datasheet Preview — Preview of 2SC1953 PDF

Datasheet Specifications

Part number: 2SC1953
Manufacturer: INCHANGE
File Size: 212.52 KB
Datasheet: 2SC1953-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base

2SC1953 Distributors

📁 Related Datasheet

2SC1955 2SC1957 2SC1959 2SC1959-GR 2SC1959-O 2SC1959-Y

📌 All Tags

2SC1953 NPN Transistor INCHANGE

INCHANGE 2SC1953-like datasheet