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2SC1953 NPN Transistor

2SC1953 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). Good Linearity of hFE. Complement to Type 2SA914. Minimum Lot-to-Lot.

2SC1953 Applications

* Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base

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Datasheet Details

Part number
2SC1953
Manufacturer
INCHANGE
File Size
212.52 KB
Datasheet
2SC1953-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC1953-like datasheet