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2SC1955 - SILICON NPN TRANSISTOR

2SC1955 Description

SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS..

2SC1955 Features

* . Output Power : Po=2.8W (Min. ) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector

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SILICON NPN TRANSISTOR Toshiba
Toshiba 2SC1955-like datasheet