* . High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2S
2SC109A
40.94 KB
Silicon npn epitaxial type transistor.
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC1 09A,
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm
^9.39 MA.
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FEATURES . Output Power : P =l. 2W(Min.
(f=470MHz, VCC=12.6V, I»i=0.3W)
U.
