* . High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2S
2SC108A
40.94 KB
Silicon npn epitaxial type transistor.
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC1 09A,
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm
^9.39 MA.
📁 Related Datasheet
2SC1080 - (2SC1079 / 2SC1080) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors ..
2SC1079 2SC1080
DESCRIPTION ·With TO-3 package ·Com.
2SC1080 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1080
DESCRIPTION ·With TO-3 Package ·High power dissipation ·100% avalanche tested ·Minim.
2SC1000 - Silicon NPN Transistor
(Toshiba)
.
2SC1000 - Silicon NPN Transistor
(ETC)
.
2SC1001 - SILICON NPN TRANSISTOR
(Toshiba)
:)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS
FEATURES . Output Power : P =l. 2W(Min.
(f=470MHz, VCC=12.6V, I»i=0.3W)
U.
2SC1002 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition .
2SC1004 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors ..
2SC1004
DESCRIPTION ·With TO-3 package ·High breakd.
2SC1004 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1004
DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minim.
