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2SC1165 Datasheet - Toshiba

2SC1165 Silicon NPN epitaxial planer type Transistor

2SC1165 Features

* . Output Power : F o =0. 9W(Min. (f=470MHz, Vcc=12.6V, 5 I i=0.3W) . All Electrodes Insulated from Case. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature

2SC1165_Toshiba.pdf

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Datasheet Details

Part number:

2SC1165

Manufacturer:

Toshiba ↗

File Size:

60.35 KB

Description:

Silicon npn epitaxial planer type transistor.

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2SC1165 2SC1165 Silicon NPN epitaxial planer type Transistor Toshiba

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