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2SC1162 - Silicon NPN Transistor

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Part number 2SC1162
Manufacturer Hitachi Semiconductor
File Size 29.63 KB
Description Silicon NPN Transistor
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2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings 35 35 5 2.5 3 0.75 10 150 –55 to +150 Unit V V V A A W W °C °C 2SC1162 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5 — 1 Typ — — — — — — 0.93 0.5 180 Max — — — 20 320 — 1.5 1.
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