* . Low Noise for High and Low Frequency : NF=4 . OdB (Max . ) : NF=lldB (Max.) f=200MHz f=10kHz Unit in mm 09.S9MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature S
2SC1199
65.79 KB
Silicon npn transistor.
:
SILICON NPN EPITAXIAL PLANAR TYPE
2SC1199
HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.
FEATU.
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