* . Low Noise for High and Low Frequency : NF=4 . OdB (Max . ) : NF=lldB (Max.) f=200MHz f=10kHz Unit in mm 09.S9MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature S
2SC1199
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Silicon npn transistor.
: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1199 HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. FEATU.
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