* 3.05±0.1
* High collector-emitter voltage (Base open) VCEO
* Small collector output capacitance (Common base, input open cir- 1.9±0.1 16.0±1.0 cuited) Cob
* A complementary pair with 2SA0914, is optimum for the pre-driver stage of a 60 W to 100 W output amplifier /
2SC1953
Panasonic Semiconductor
214.73 KB
Power transistors.
Power Transistors
2SC1953
Silicon NPN epitaxial planar type
For audio system/pre-drive Complementary to 2SA0914
φ 3.16±0.1
8.0+
*00..15
Uni.
📁 Related Datasheet
2SC1953 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to T.
2SC1953 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC1953
DESCRIPTION ·With TO-126 package ·Complemen.
2SC1955 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
2SC1955
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES •
. Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, .
2SC1957 - SILICON NPN TRANSISTOR
(BLUE ROCKET ELECTRONICS)
2SC1957(3DG1957)
NPN /SILICON NPN TRANSISTOR
:。
Purpose: Large signal output amplifier.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Un.
2SC1959 - PNP Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applicatio.
2SC1959 - Transistor
(Micro Commercial Components)
MCC
Features
•
omponents 20736 Marilla Street Chatsworth # $
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2SC1959
Audio fr.
2SC1959 - NPN Plastic Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
2SC1959
0.5A, 35V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.
2SC1959-GR - Power Silicon NPN Transistor
(MCC)
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
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