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2SC1980 - NPN Transistor

2SC1980 Description

Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm .

2SC1980 Features

* High collector-emitter voltage (Base open) VCEO
* Low noise voltage NV 0.7±0.1
* Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO

2SC1980 Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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NPN Transistor Panasonic Semiconductor
Panasonic Semiconductor 2SC1980-like datasheet