Datasheet4U Logo Datasheet4U.com

2SC1985 Datasheet - INCHANGE

2SC1985, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1985 .
Silicon NPN tripe diffused mesa. Collector-Emitter Breakdown Voltage- :V(BR)CEO= 60(V)(Min. 100% avalanche tested. Minimum Lot-to-L.
 datasheet Preview Page 1 from Datasheet4u.com

2SC1985-INCHANGE.pdf

Preview of 2SC1985 PDF

Datasheet Details

Part number:

2SC1985

Manufacturer:

INCHANGE

File Size:

181.34 KB

Description:

NPN Transistor

Applications

* General and industrial purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temp

2SC1985 Distributors

📁 Related Datasheet

📌 All Tags

INCHANGE 2SC1985-like datasheet