Datasheet4U Logo Datasheet4U.com

2SC1985 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SC1985

Datasheet Details

Part number 2SC1985
Manufacturer INCHANGE
File Size 181.34 KB
Description NPN Transistor
Datasheet download datasheet 2SC1985 Datasheet
Additional preview pages of the 2SC1985 datasheet.

Product details

Description

Silicon NPN tripe diffused mesa Collector-Emitter Breakdown Voltage- :V(BR)CEO= 60(V)(Min.) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General and industrial purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipat

📁 Similar Datasheet

  • 2SC1980 - NPN Transistor (Panasonic Semiconductor)
  • 2SC1983 - NPN SILICON DARLINGTON TRANSISTOR (Wing Shing Computer Components)
  • 2SC1983L - (2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor (SeCoS Halbleitertechnologie GmbH)
  • 2SC1984L - (2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor (SeCoS Halbleitertechnologie GmbH)
  • 2SC1988 - NPN SILICON HIGH FREQUNY TRANSISTOR (NEC)
  • 2SC1906 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC1907 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC1908 - NPN Transistor (ETC)
Other Datasheets by INCHANGE
Published: |