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2SC1986 - NPN Transistor

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Part number 2SC1986
Manufacturer INCHANGE
File Size 181.54 KB
Description NPN Transistor
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Description

Silicon NPN tripe diffused mesa Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General and industrial purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipa

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