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2SC1986 - NPN Transistor

2SC1986 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1986 .
Silicon NPN tripe diffused mesa. Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min. 100% avalanche tested. Minimum Lot-to-L.

2SC1986 Applications

* General and industrial purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Tem

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Datasheet Details

Part number
2SC1986
Manufacturer
INCHANGE
File Size
181.54 KB
Datasheet
2SC1986-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC1986-like datasheet