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2SC1986 Datasheet - INCHANGE

2SC1986 NPN Transistor

*Silicon NPN tripe diffused mesa *Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *General and industrial purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃).

2SC1986-INCHANGE.pdf

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Datasheet Details

Part number:

2SC1986

Manufacturer:

INCHANGE

File Size:

181.54 KB

Description:

Npn transistor.

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2SC1986 2SC1986 NPN Transistor INCHANGE

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