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2SC1970 Silicon NPN Power Transistor

2SC1970 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1970 .
High Power Gain- : Gpe≥ 9. High Reliability. 100% avalanche tested. Minimum Lot-to-Lot variations f.

2SC1970 Applications

* Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 17 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Powe

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Datasheet Details

Part number
2SC1970
Manufacturer
Inchange Semiconductor
File Size
191.18 KB
Datasheet
2SC1970_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC1970-like datasheet