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2SC1970 Datasheet - Inchange Semiconductor

2SC1970 Silicon NPN Power Transistor

*High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V *High Reliability *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLU.

2SC1970_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC1970

Manufacturer:

Inchange Semiconductor

File Size:

191.18 KB

Description:

Silicon npn power transistor.

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