Datasheet Details
| Part number | 2SC1970 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SC1970 Datasheet
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| Part number | 2SC1970 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SC1970 Datasheet
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High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 17 V VEBO Emitter-Base Voltage 4 V IC Collector Current
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