2SC1970 Datasheet, transistor equivalent, Inchange Semiconductor

PDF File Details

Part number:

2SC1970

Manufacturer:

Inchange Semiconductor

File Size:

191.18kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V

High Reliability

100% avalanche tested

2SC1970 Application

• Applications
• Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER

TAGS

2SC1970

Inchange Semiconductor

📁 Related Datasheet

2SC1971 - NPN Transistor (Mitsubishi Electric Semiconductor)
.

2SC1971 - Silicon NPN Power Transistor (Inchange Semiconductor)
.. INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ .

2SC1971 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEAT.

2SC1972 - NPN Transistor (Mitsubishi Electric Semiconductor)
.

2SC1972 - NPN SILICON RF POWER TRANSISTOR (ASI)
2SC1972 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEAT.

2SC1972 - Silicon NPN POWER TRANSISTOR (HGSemi)
HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC1972 Note : Above parameters , ratings , limits and cond.

2SC1972 - silicon NPN epitaxial planar type transistor (Eleflow)
2SC1972 Description The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal .

2SC1973 - NPN Transistor (Panasonic Semiconductor)
.

2SC1974 - Si NPN Transistor (ETC)
.

2SC1975 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1975 DESCRIPTION ·Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) ·Withstands worst.