C2351 Datasheet | Specifications & PDF Download

www.ti.com UCC23513 SLUSD31E – OCTOBER 2018 – REVISED AUUCGCUS2T32501230 SLUSD31E – OCTOBER 2018 – REVISED AUGUST 2020 UCC23513, 4-A Source, 5-A Sink

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LTC2351-12 FEATURES 6 Channel, 12-Bit, 1.5Msps Simultaneous Sampling ADC With Shutdown DESCRIPTION n 1.5Msps ADC with 6 Simultaneously Sampled Diff

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J & K Series Thru Hole LEDs J Series, Blue Clear and Diffused, Water Clear LED, 2351 Series Small Flange T-1, 3mm Round The J series lamps are made w

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D Low Output Skew, Low Pulse Skew for Clock-Distribution and Clock-Generation Applications D Operates at 3.3-V VCC D LVTTL-Compatible Inputs and Outpu

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LTC2351-14 FEATURES 6-Channel, 14-Bit, 1.5Msps Simultaneous Sampling ADC with Shutdown DESCRIPTION n 1.5Msps ADC with Six Simultaneously Sampled Di

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·Hig

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D Controlled Baseline − One Assembly/Test Site, One Fabrication Site D Extended Temperature Performance of −55°C to 125°C D Enhanced Diminishing Manuf

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·Hig

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DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB 14 d

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www.ti.com UCC23513-Q1 SLUSDT9B – MAY 2020 – REVIUSECDCM2A3R5C1H32-Q0211 SLUSDT9B – MAY 2020 – REVISED MARCH 2021 UCC23513-Q1 4-A Source, 5-A Sink,

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SMC2351SN Single P-Channel MOSFET ■DESCRIPTION SMC2351SN is the P-Channel enhancement mode power field effect transistors are using trench DMOS tech

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SMC2351SQ Single P-Channel MOSFET ■DESCRIPTION SMC2351SQ is the P-Channel enhancement mode power field effect transistors are using trench DMOS tech

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