C2859 Datasheet | Specifications & PDF Download

Silicon Epitaxial Planar Transistor FEATURES  Power dissipation：PC=150mW.  Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).  Complementary to

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2 SC2859 TRANSISTOR (NPN) SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol V

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2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Appli

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2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Appli

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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FEATURES Integrated, Logic-Selectable 120Ω Termination Resistor ■ 20Mbps Max Data Rate ■ No Damage or Latchup to ESD: ±15kV HBM ■ High Input Impedance

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Elektronische Bauelemente 2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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KSC2859 KSC2859 Low Frequency Power Amplifier • Complement to KSA1182 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transist

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SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 2

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