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2SC2859 - Silicon NPN Transistor

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Part number 2SC2859
Manufacturer Toshiba Semiconductor
File Size 201.70 KB
Description Silicon NPN Transistor
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2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1182. Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 35 V 30 V 5 V 500 mA 50 mA 150 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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