2SC2824 - Silicon NPN Epitaxial Type Transistor

Toshiba

Key Features

Complementary to 2SA1184.
Suitable for driver of 60 to 80 watts audio amplifier.
High breakdown voltage. Unit in mm 7. 9 MAX. ' 03.1 ±0.15.

2SC2824 silicon npn epitaxial type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2824
Manufacturer	Toshiba
File Size	111.76 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	2SC2824 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1 1 2SC2824 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Complementary to 2SA1184. • Suitable for driver of 60 to 80 watts audio amplifier. • High breakdown voltage. Unit in mm 7. 9 MAX. ' 03.1 ±0.15 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Ti Storage Temperature Range : stg RATING 120 120 UNIT 100 mA 15 150 °C -55-150 °C 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE JEDEC TO-126 EIAJ TOSHIBA 2-8F1A Mounting Kit No. AC46C Weight : 0.