C2M0080170P (Cree)
Silicon Carbide Power MOSFET
VDS 1700 V
C2M0080170P
ID @ 25˚C
40 A
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
RDS(on) 80 mΩ
N-Channel Enhancement Mode
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VDS 1700 V C2M0080170P ID @ 25˚C 40 A .
Silicon Carbide Power MOSFET
C2M0080170P Distributor
