* Package
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Easy to parallel and simple to drive
C2M0080170P Datasheet (798.79 KB)
C2M0080170P
Cree
798.79 KB
Silicon carbide power mosfet.
VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode .
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