C2M0080170P Datasheet - Cree

C2M0080170P, Silicon Carbide Power MOSFET

VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode .

Features

* Package
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Easy to parallel and simple to drive

Applications

* 1500V Solar Inverters
* Switch Mode Power Supplies
* High voltage DC/DC Converters
* Capacitor discharge 1 234 D SSG Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Part Number C2M0080170P Package TO-247-4 Plus Marking C2M0080

C2M0080170P-Cree.pdf