C2M0160120D Datasheet, Mosfet, Cree

C2M0160120D Features

  • Mosfet Package
  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche

PDF File Details

Part number:

C2M0160120D

Manufacturer:

Cree

File Size:

639.42kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

Datasheet Preview: C2M0160120D 📥 Download PDF (639.42kb)
Page 2 of C2M0160120D Page 3 of C2M0160120D

C2M0160120D Application

  • Applications
  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • LED Lighting Power S

TAGS

C2M0160120D
Silicon
Carbide
Power
MOSFET
Cree

📁 Related Datasheet

C2M0160120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0160120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0025120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0025120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0025120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Fe.

C2M0040120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0040120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0040120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Fe.

C2M0045170D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0045170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • High blo.

C2M0045170D - Silicon Carbide Power MOSFET (Cree)
VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .

C2M0045170P - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimize.

C2M0045170P - Silicon Carbide Power MOSFET (Cree)
VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .

C2M0080120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0080120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 36 A 80 mΩ N-Channel Enhancement Mode Fe.

Stock and price

part
Wolfspeed
SICFET N-CH 1200V 19A TO247-3
DigiKey
C2M0160120D
1230 In Stock
Qty : 120 units
Unit Price : $9.38
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts