C2M0160120D Silicon Carbide Power MOSFET

Cree

Description

VDS 1200 V C2M0160120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 18 A 160 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C2M0160120D
Manufacturer: Cree
File Size: 639.42 KB
Datasheet: C2M0160120D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* Resistant to Latch-Up
* Halogen Free, RoHS Compliant Benefits TO-247-3
* Hi

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC Converters
* LED Lighting Power Supplies Part Number C2M0160120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax V

C2M0160120D Distributors

📁 Related Datasheet

C2M0025120D C2M0040120D C2M0045170D C2M0045170P

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C2M0160120D Silicon Carbide Power MOSFET Cree

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