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C2M0280120D - Silicon Carbide Power MOSFET

C2M0280120D Description

VDS 1200 V C2M0280120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 11 A 280 mΩ N-Channel Enhancement Mode F.

C2M0280120D Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* Resistant to Latch-Up
* Halogen Free, RoHS Compliant Benefits TO-247-3
* Hi

C2M0280120D Applications

* LED Lighting Power Supplies
* High Voltage DC/DC Converters
* Industrial Power Supplies
* HVAC Part Number C2M0280120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop D

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Datasheet Details

Part number
C2M0280120D
Manufacturer
Cree
File Size
783.34 KB
Datasheet
C2M0280120D-Cree.pdf
Description
Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET Cree
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