C2M1000170D Silicon Carbide Power MOSFET

Cree

Description

VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.0 Ω N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C2M1000170D
Manufacturer: Cree
File Size: 912.07 KB
Datasheet: C2M1000170D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Applications

* Auxiliary Power Supplies
* Switch Mode Power Supplies
* High-voltage Capacitive Loads Ordering Part Number C2M1000170D Package TO-247-3 Marking C2M1000170 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGS

C2M1000170D Distributors

📁 Related Datasheet

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C2M1000170D Silicon Carbide Power MOSFET Cree

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