C2M1000170D Datasheet, Mosfet, Cree

PDF File Details

Part number:

C2M1000170D

Manufacturer:

Cree

File Size:

912.07kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

C2M1000170D Application

• Applications
• Auxiliary Power Supplies
• Switch Mode Power Supplies
• High-voltage Capacitive Loads Ordering Part Number C

TAGS

C2M1000170D

Cree

📁 Related Datasheet

C2M1000170D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M1000170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • Hi.

C2M1000170J - Silicon Carbide Power MOSFET (Cree)
C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • • High blocking voltage with low RDS(on) Eas.

C2M1000170J - Silicon Carbide Power MOSFET (Wolfspeed)
C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) • High.

C2M0025120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0025120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0025120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Fe.

C2M0040120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0040120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0040120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Fe.

C2M0045170D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0045170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • High blo.

C2M0045170D - Silicon Carbide Power MOSFET (Cree)
VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .

C2M0045170P - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimize.