Datasheet4U Logo Datasheet4U.com

C2M0080120D - Silicon Carbide Power MOSFET

C2M0080120D Description

VDS 1200 V C2M0080120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 36 A 80 mΩ N-Channel Enhancement Mode Fe.

C2M0080120D Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* Halogen Free, RoHS Compliant Benefits
* Higher System Efficiency
* Reduced Co

C2M0080120D Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC Converters
* Battery Chargers
* Motor Drives
* Pulsed Power applications Part Number C2M0080120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol

📥 Download Datasheet

Preview of C2M0080120D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
C2M0080120D
Manufacturer
Cree
File Size
818.44 KB
Datasheet
C2M0080120D-Cree.pdf
Description
Silicon Carbide Power MOSFET

📁 Related Datasheet

  • C2M0025120D - Silicon Carbide Power MOSFET (Wolfspeed)
  • C2M0040120D - Silicon Carbide Power MOSFET (Wolfspeed)
  • C2M0045170D - Silicon Carbide Power MOSFET (Wolfspeed)
  • C2M0045170P - Silicon Carbide Power MOSFET (Wolfspeed)

📌 All Tags

Silicon Carbide Power MOSFET Cree
Cree C2M0080120D-like datasheet