C2M0080120D Datasheet - Cree

C2M0080120D, Silicon Carbide Power MOSFET

VDS 1200 V C2M0080120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 36 A 80 mΩ N-Channel Enhancement Mode Fe.

Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* Halogen Free, RoHS Compliant Benefits
* Higher System Efficiency
* Reduced Co

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC Converters
* Battery Chargers
* Motor Drives
* Pulsed Power applications Part Number C2M0080120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol

C2M0080120D-Cree.pdf