Datasheet Details
- Part number
- C2M1000170J
- Manufacturer
- Cree
- File Size
- 2.24 MB
- Datasheet
- C2M1000170J-Cree.pdf
- Description
- Silicon Carbide Power MOSFET
C2M1000170J Description
C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode .
C2M1000170J Features
* High blocking voltage with low RDS(on) Easy to parallel and simple to drive
* Low parasitic inductance
* Low impedance package
* Separate driver source pin
* Ultra-low drain-gate capacitance
* Halogen-Free, RoHS compliant
C2M1000170J Applications
* Auxiliary power supplies
* Switch Mode Power Supplies
* High-voltage capacitive loads
Package
VDS ID @ 25˚C RDS(on)
1700 V 5.3 A 1.0
Part Number C2M1000170J
Package TO-263-7
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test C
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