TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT.
Toshiba Semiconductor
14
2SC3076 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low.
Kexin
4
2SC3076 - Silicon NPN Transistor
SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat).
Fairchild Semiconductor
3
KSC3076 - NPN Epitaxial Silicon Transistor
KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. .
Toshiba
3
C3076 - 2SC3076
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low.
INCHANGE
3
2SC3076 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3076 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V (Max.)@ IC= 1A ·.
PCA ELECTRONICS
1
EPC3076G-x - Surface Mount Power Transformer
www.DataSheet4U.com Surface Mount Power Transformer ELECTRONICS INC. EPC3076G-X Features of the ER 11-6 Series • Low Loss Material ensures operation.