C3076 Datasheet - Toshiba

C3076 2SC3076

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) Excellent switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5.

C3076-Toshiba.pdf