Datasheet Details
- Part number
- C3076
- Manufacturer
- Toshiba ↗
- File Size
- 163.79 KB
- Datasheet
- C3076-Toshiba.pdf
- Description
- 2SC3076
C3076 Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm <.
C3076 Applications
* Power Switching Applications
2SC3076
Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
* Excellent switching time: tstg = 1.0 μs (typ. )
* Complementary to 2SA1241
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Col
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