2SC3076 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3076 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V (Max.)@ IC= 1A ·

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low

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SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat)

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low

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