C3591 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistors 2SC3591 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Fast Switching Speed ·Low Saturat

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Ordering number:EN1609D Features · Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. NPN Epitaxial Planar Silicon Transisto

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Ordering number:EN1609D Features · Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. NPN Epitaxial Planar Silicon Transisto

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3591 DESCRIPTION ·With TO-220C package ·Fast swi

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