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2SC3591 NPN Transistor

2SC3591 Description

isc Silicon NPN Power Transistors 2SC3591 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Fast Switching Speed. Low Saturation Voltage. Minimum Lot-to-Lot variatio.

2SC3591 Applications

* Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuou

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Datasheet Details

Part number
2SC3591
Manufacturer
INCHANGE
File Size
190.28 KB
Datasheet
2SC3591-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3591-like datasheet