2SC3590 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). Fast Switching Speed. Low Saturation Voltage. Minimum Lot-to-Lot variatio.

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Datasheet Specifications

Part number: 2SC3590
Manufacturer: Inchange Semiconductor
File Size: 194.37 KB
Datasheet: 2SC3590_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuou

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2SC3590 Power Transistor Inchange Semiconductor

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