C3657 Datasheet | Specifications & PDF Download
C3657 2SC3657
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Toshiba Semiconductor
C3657 - 2SC3657
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Toshiba Semiconductor
2SC3657 - NPN Transistor
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Inchange Semiconductor
2SC3657 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Minimum.
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