2SC3680 Silicon NPN Triple Diffused Planar Transis.
2SC3680 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability.IS49NLC36800A - Common I/O RLDRAM 2 Memory
IS49NLC93200A/IS49NLC18160A/IS49NLC36800A 32Mbx9, 16Mbx18, 8Mbx36 Common I/O RLDRAM 2 Memory AUGUST 2021 FEATURES 533MHz DDR operation (1.067 Gb.2SC3680 - Silicon NPN Transistor
2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC.C3680 - 2SC3680
2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC.2SC3680 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3680 DESCRIPTION ·With TO-3PN package ·High volt.IS49NLC36800 - 288Mb Common I/O RLDRAM 2 Memory
IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory JANUARY 2020 FEATURES 400MHz DDR operation (800Mb/s/pin d.PEH536PBC3680M - Snap-In Aluminum Electrolytic Capacitors
Snap-In Aluminum Electrolytic Capacitors PEH536 Series, +105ºC Overview Applications Typical applications for KEMET's PEH536 capacitor include switc.GPC3680A - 3-channel Sound Controller
DATA SHEET GPC3XXXAx/Bx/Cx/Dx 3-channel Sound Controller P Aug. 28, 2017 Version 2.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this do.